 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SBP13007S High Voltage Fast-Switching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at Tc = 25 Total Dissipation at Ta = 25 Operation Junction Temperature Storage Temperature tP = 5ms Test Conditions VBE = 0 IB = 0 IC = 0 Value 700 400 9.0 8.0 16 4.0 8.0 80 2.1 - 40 ~ 150 - 40 ~ 150 Units V V V A A A A W Tc: Case temperature (good cooling) Ta: Ambient temperature (without heat sink) Thermal Characteristics Symbol RJc RJA Parameter Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Value 1.56 62.5 Units /W /W Jan 2009. Rev. 0 Copyright @WinSemi Semiconductor Co.,Ltd.,All rights reserved. 1/5 SBP13007S Electrical Characteristics (TC=25 unless otherwise noted) Symbol VCEO(sus) Value Parameter Collector-Emitter Breakdown Voltage Test Conditions Ic=10mA,Ib=0 Ic=2.0A,Ib=0.4A Ic=5.0A,Ib=1.0A Min 400 Typ Max 0.5 1.0 2.5 2.5 1.2 1.6 1.5 1.0 5.0 40 40 Units V V VCE(sat) Collector-Emitter Saturation Voltage Ic=8.0A,Ib=2.0A Ic=5.0A,Ib=1.0A Tc=100 Ic=2.0A,Ib=0.4A - V V VBE(sat) Base-Emitter Saturation Voltage Ic=5.0A,Ib=1.0A Ic=5.0A,Ib=1.0A Tc=100 - V ICBO Collector-Base Cutoff Current (Vbe=-1.5V) DC Current Gain Resistive Load Vcb=700V Vcb=700V, Tc=100 Vce=5V,Ic=2.0A Vce=5V, Ic=5.0A 10 5 - - mA hFE ts tf ts tf ts tf Storage Time Fall Time Inductive Load Storage Time Fall Time Inductive Load Storage Time Fall Time VCC=125V , IB1=1.0A , Tp=25 Ic=5.0A IB2=-1.0A 1.5 0.17 0.8 0.06 1.0 0.07 3.0 0.4 2.0 0.12 3.0 0.15 VCC=15V ,Ic=5A IB1=1.0A , IB2=-2.5A L=0.35mH,Vclamp=300V VCC=15V ,Ic=1A IB1=0.4A , IB2=-1.0A L=0.35mH,Vclamp=300V Tc=100 Note: Pulse Test : Pulse width 300, Duty cycle 2% 2/5 . SBP13007S Fig. 1 DC Current Gain Fig. 2 Collector-Emitter Saturation Voltage Fig. 3 Base--Emitter Saturation Voltage Fig. 4 Safe Operation Area Fig.5 Power Derating Fig.6 Reverse Biased Safe Operation Area 3/5 SBP13007S Resistive Load Switching Test Circuit Inductive Load Switching & RBSOA Test Circuit 4/5 . SBP13007S TO-220 Package Dimension 5/5 |
Price & Availability of SBP13007S
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |